DRAM market remains weak, 2GB DDR3 modules to hit $10

Remember how we said RAM prices probablywouldn't get much cheaper in the near future? Well, that was very wrong. Citing anonymous industry sources, DigiTimes reports today that Kingston has cut deals to sell its 2GB DDR3 modules for as cheap as $11 (yes, that's eleven bucks), and that move has prompted competing firms lower their prices as far as $10. By offering lower prices, DRAM manufacturers expect shipments to rise, but DigiTimes' sources believe the overall demand will remain weak.

Based on DRAMeXchange's stats, contract prices have plunged more than 15% during July and that's expected to continue through August. Average contract prices for 2GB DDR3 modules fell 9.4% to $14.50 in the second half of this month while 4GB modules dipped a similar 9.7% to $28. At the same time, 1Gb and 2Gb chips were $0.75 and $1.59. Etail prices via Newegg are hovering around $25 to $30 for budget 2x2GB DDR3 1333MHz kits, while individual 2GB modules are between $15 and $20.

Last Tuesday, iSuppli released a report claiming DRAM prices would continue to fall -- albeit increasingly slower. "Following a drop of 14.2% in the first quarter of 2011, the global average decline in pricing for DRAM slowed to 12% in the second quarter. The rate of decrease is expected to decline to 9% in the third quarter and then dwindle to just 4% in the fourth quarter. The rate of decrease will further slow to just 1% in the first quarter of 2012, and then remain in the 3 to 4% range during the rest of 2012."

In a separate report released last month, the research firm said DDR4 DRAM would arrive in 2014 and rapidly eclipse DDR3 sales by 2015. Although DDR3 will remain relevant for at least a year or two following the launch of DDR4 modules, the newer technology is expected to represent some 56% of the market only one year after it hit shelves. That's a significantly faster adoption rate than witnessed with DDR3, which took two years to achieve 24% of the market and three years before it finally outgrew DDR2.

Samsung develops DDR4 memory with up to 40 percent better energy efficiency than DDR

Samsung's famed lead in component manufacturing is being extended today with the announcement of a DDR4 DRAM stick that can perform read and write operations using up to 40 percent less power than the old/current DDR3 stuff. Bandwidth maxes out at 2.13Gbps at 1.2V, while Pseudo Open Drain technology assists in minimizing the battery impact. Over time, Samsung projects the new DRAM modules will hit 4Gbps speeds. It's working away with server makers right now in order to achieve JEDEC certification, but the target market will clearly be laptops and other mobile devices, where energy-frugal memory like this would best be appreciated. Check out Samsung's PR after the break.

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Samsung Develops Industry's First DDR4 DRAM, Using 30nm Class Technology

SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, announced today that it completed development of the industry's first DDR4 DRAM module last month, using 30 nanometer (nm) class* process technology.

"Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year," said Dong Soo Jun, president, memory division, Samsung Electronics. "The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application."

The new DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbps) at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class* process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5V DDR3 module.

The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data.

By employing new circuit architecture, Samsung's DDR4 will be able to run from 1.6 up to 3.2Gbps, compared to today's typical speeds of 1.6Gbps for DDR3 and 800Mbps for DDR2.

Late last month, Samsung provided 1.2V 2 gigabyte (2GB) DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing.

Samsung now plans to work closely with a number of server makers to help insure completion of JEDEC standardization of DDR4 technologies in the second half of this year.

Samsung has been leading the advancement of DRAM technology ever since it developed the industry's first DDR DRAM in 1997. In 2001, it introduced the first DDR2 DRAM, and in 2005, announced the first DDR3 DRAM using 80nm-class technology.

For more information about Samsung Green memory, visit www.samsung.com/GreenMemory.